HAF1004 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HAF1004

Silicon P Channel MOS FET Series Power Switching

Renesas Electronics 

HAF1004(L), HAF1004(S)

1000

500

Body to Drain Diode Reverse

Recovery Time

200

100

50

20

di / dt = 50 A / µs

VGS = 0, Ta = 25°C

10

–0.1 –0.2 –0.5 –1 –2

–5 –10

Reverse Drain Current IDR (A)

Switching Characteristics

100

50

20

10 t d(off)

tr

5

tf

2

t d(on)

1

0.5

0.2

0.1

–0.1 –0.2

VGS = –10 V, VDD = –30 V

PW = 300 µs, duty < 1 %

–0.5 –1 –2

–5 –10

Drain Current ID (A)

Reverse Drain Current vs.

Source to Drain Voltage

–5

Pulse Test

–4

-10 V

10000

Typical capacitance vs.

Drain to Source Voltage

VGS = 0

f = 1 MHz

–3

–2

-5 V

VGS = 0 V

–1

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage VSD (V)

1000

Coss

100

0

–10 –20 –30 –40 –50 –60

Drain to Source VDS (V)

Rev.5.00, Apr.29.2003, page 6 of 10

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