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Número de pieza
componentes Descripción
HAF1004 Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
HAF1004
Silicon P Channel MOS FET Series Power Switching
Renesas Electronics
HAF1004 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
HAF1004(L), HAF1004(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Cannel dissipation
Cannel temperature
Storage temperature
Notes: 1. PW
≤
0
µ
s, duty cycle
≤
1%
2. Value at Ta = 25°C
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
D (pulse)
Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
Unit
–60
V
–16
V
2.5
V
–5
A
–10
A
–5
A
20
W
150
°C
–55 to +150
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
Max
Unit
—
—
V
—
–1.2
V
—
–100
µA
—
–50
µA
—
–1
µA
–0.8
—
mA
–0.35 —
mA
175
—
°C
—
–12
V
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Cannel temperature
Rev.5.00, Apr.29.2003, page 2 of 10
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