HA-5002
Die Characteristics
DIE DIMENSIONS:
81 mils x 80 mils x 19 mils
2050µm x 2030µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 20kÅ ±2kÅ
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
SUBSTRATE POTENTIAL (Powered Up):
V1-
TRANSISTOR COUNT:
27
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5002
V1-
IN
V1+ (ALT)
V1- (ALT)
V2+
V2-
V1+
OUT
8