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HA22012

GaAs MMIC Low Noise Amplifier for Micro Wave Application

Hitachi -> Renesas Electronics 

HA22012

Absolute Maximum Ratings (Ta = 25°C)

Item

Supply voltage

Maximum current

Power dissipation

Channel temperature

Storage temperature

Operation temperature

Symbol

Vdd

Idd

Pd

Tch

Tstg

Topr

Ratings

Unit

5

V

6

mA

100

mW

150

°C

–55 to +150

°C

–20 to +70

°C

Electrical Characteristics (Ta = 25°C, Vdd = 3V)

Item

Quiescent current

Power gain

Noise figure

Symbol Min Typ Max Unit Test Conditions

Pin

Idd

1.5

3

5.5 mA

No signal

PG

11.5 13.5 16

dB

f = 1.9 GHz

NF

—

1.9

2.5

dB

f = 1.9 GHz

Typical Performance (Ta = 25°C, Vdd = 3V)

Item

VSWR (input)

VSWR (output)

3rd order intermodulation

distortion

Symbol

Typ

VSWR in 1.6

VSWR out 1.6

IM3

58

Unit

—

—

dB

Test Conditions

Pin

f = 1.9 GHz

4

f = 1.9 GHz

1

f = 1.9 GHz, UD = 1.9006 Ghz

Pin = –30 dBm

2

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