Die Characteristics
DIE DIMENSIONS:
74mils x 103mils x 19mils ± 1mil
1880µm x 2620µm x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
SUBSTRATE POTENTIAL (Powered Up): V-
GLASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
TRANSISTOR COUNT: 129
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
EN
HA-2444/883
HA-2444/883
GND D1
2
1
8
D0
7
+IN2
-IN2
V-
+IN1
4
5
-IN1
OUT
+IN4
-IN4
V+
+IN3
6
-IN3
Spec Number 511091-883
3-5