H7P1002DL Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
H7P1002DL Datasheet PDF : 9 Pages
| |||
H7P1002DL, H7P1002DS
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–2 A, –5 A
ID = –10 A
0.15 VGS = –4.5 V
0.10
–2 A, –5 A
–10 A
0.05
–10 V
0
–50
0
50
100
150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
Pulse Test
300
100
30
10
3
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
1
–0.1 –0.3 –1 –3 –10 –30 –100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –25 V ID = –15 A
–50 V
–40
–100 V
–4
VDS
–80
VGS
–8
–120
VDD = –100 V
–50 V
–12
–25 V
–160
0
16 32 48 64
Gate Charge Qg (nc)
–16
80
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
300
Coss
100
Crss
30 VGS = 0
f = 1 MHz
10
0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage VDS (V)
1000
Switching Characteristics
300
td(off)
tr
100
30
td(on)
10
tf
3
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
RG = 4.7 Ω
1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current ID (A)
REJ03G1601-0100 Rev.1.00 Nov 16, 2007
Page 4 of 8
Share Link: 