DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

H7N0308LD Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
H7N0308LD Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
H7N0308LD, H7N0308LS, H7N0308LM
Reverse Drain Current vs.
Souece to Drain Voltage
100
80
10 V
VGS = 0, –5 V
60
5V
40
20
Pulse Test
0
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.5.00 Apr 07, 2006 page 5 of 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]