H5N2004DL Ver la hoja de datos (PDF) - Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
H5N2004DL Datasheet PDF : 8 Pages
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H5N2004DL, H5N2004DS
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
VGS = 10 V
1.6
1.2
ID = 8 A
0.8
5A
0.4
2A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
500 VGS = 0, Ta = 25°C
200
100
50
20
10
0.1 0.2
0.5 1 2
5 10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
20
ID = 4 A
400
VDD = 50 V
300
100 V
160 V
VGS
16
12
200
8
VDS
100
0
0
VDD = 160 V
4
100 V
50 V
0
4
8
12
16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
25°C
1
0.5
0.2
75°C
0.1
0.05
VDS = 10 V
Pulse Test
0.02
0.02 0.05 0.1 0.2 0.5 1 2 5 10
Drain Current ID (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
200
100
50
Coss
20
10
Crss
5
0
20 40 60 80 100
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 10 V, VDD = 100 V
PW = 10 µs, duty ≤ 1 %
RG = 10 Ω
100
td(off)
td(on)
10
tr
tf
1
0.1 0.2
0.5 1 2
5 10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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