H5N2003P-E Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

H5N2003P-E

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

H5N2003P

200

Reverse Drain Current vs.

Source to Drain Voltage

160

120

VGS = 0 V

80

40

10 V

5V

Pulse Test

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Gate to Source Cutoff Voltage

vs. Case Temperature

5

VDS = 10 V

ID = 10 mA

4

1 mA

3

0.1 mA

2

1

0

-25 0 25 50 75 100 125 150

Case Temperature Tc (°C)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

D=1

Tc = 25°C

0.5

0.3

0.2

0.1 0.1

0.05

0.03

0.02

0.01

1shot

pulse

0.01

10 µ

100 µ

θch − c(t) = γ s (t) • θ ch − c

θch − c = 0.833°C/W, Tc = 25°C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (s)

Switching Time Test Circuit

Vin Monitor

10Ω

Vin

10 V

D.U.T.

Vout

Monitor

RL

VDD

= 100 V

Waveform

Vin

Vout

10%

10%

90%

td(on)

tr

90%

10%

90%

td(off)

tf

Rev.1.00, Apr.09.2004, page 5 of 6

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