AT-31625 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza

componentes Descripción

Fabricante

AT-31625

4.8 V NPN Common Emitter Medium Power Output Transistor

HP => Agilent Technologies 

AT-31625 Absolute Maximum Ratings

Symbol

VEBO

VCBO

VCEO

IC

PT

Tj

TSTG

Parameter

Emitter-Base Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Power Dissipation [2]

Junction Temperature

Storage Temperature

Units

V

V

V

mA

W

°C

°C

Absolute

Maximum[1]

1.4

16.0

9.5

320

1.0

150

-65 to 150

Thermal Resistance[3]:

θjc = 65°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. Derate at 15.4 mW/°C for Tc > 85°C.

Tc is defined to be the temperature

of the collector pin 4, where the

lead contacts the circuit board.

3. Using the liquid crystal technique,

VCE= 4.8 V, Ic = 50 mA, Tj =150°C,

1-2␣ µm “hot-spot” resolution.

Electrical Specifications, TC = 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A,

unless otherwise specified

Pout Output Power[1]

ηC

Collector Efficiency[1]

Pin = +19 dBm dBm +27.0 +28.0

Pin = +19 dBm % 55 70

IMD3 3rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dBc

Pout each Tone = +21 dBm [1]

F2 = 901 MHz

Mismatch Tolerance, No Damage[1]

Pout = +28 dBm

any phase, 2 sec duration

-31

7:1

BVEBO

BVCBO

BVCEO

hFE

ICEO

Emitter-Base Breakdown Voltage

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Forward Current Transfer Ratio

Collector Leakage Current

IE = 0.2 mA, open collector V

1.4

IC = 1.0 mA, open emitter V 16.0

IC = 5.0 mA, open base V

9.5

VCE = 3 V, IC = 180 mA — 80 150 330

VCEO = 5 V µA

15

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.

4-44

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