GT25G101SM(2003) Ver la hoja de datos (PDF) - Toshiba
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GT25G101SM Datasheet PDF : 4 Pages
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GT25G101(SM)
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101(SM)
STROBE FLASH APPLICATIONS
Unit: mm
l High Input Impedance
l Low Saturation Voltage
l Enhancement−Mode
l 12V Gate Drive
: VCE (sat) = 8V (Max.) (IC = 170A)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Collector Current
1ms
Collector Power
Dissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature Range
SYMBOL
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
RATING
400
±25
25
170
1.3
75
150
−55~150
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 1.4g
―
―
2−10S2C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−on Time
Fall Time
Turn−off Time
Thermal Resistance
SYMBOL
TEST CONDITION
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
Rth (j−c)
VGE = ±25V, VCE = 0
VCE = 400V, VGE = 0
IC = 1mA, VCE = 5V
IC = 170A, VGE = 20V (Pulsed)
VCE = 10V, VGE = 0, f = 1MHz
―
MIN TYP. MAX UNIT
―
― ±100 nA
―
―
10
µA
4
5
7
V
―
5
8
V
― 2000 ―
pF
―
0.1
0.5
― 0.15 0.5
µs
―
4.0
6.0
―
4.5
7.0
―
― 1.66 °C / W
1
2003-03-18
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