TZQ5246B(1999) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
TZQ5246B Datasheet PDF : 6 Pages
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TZQ5221B...TZQ5267B
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Available with tighter tolerances
D Very high stability
D Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Z–current
xTest Conditions
RthJA 300K/W
Junction temperature
Storage temperature range
Type
Symbol Value Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
°C
Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
on PC board 50mmx50mmx1.6mm
Symbol
Value
Unit
RthJA
500
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF
1.5 V
Document Number 85612
Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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