GP401DDS18 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
GP401DDS18 Datasheet PDF : 11 Pages
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GP401DDS18
200
Tcase = 25ßC
A
180 VGE = –15V
VCE = 900V
B
160
C
140
120
100
80
60
40
A: Rg = 4.7Ω
20
B: Rg = 3.3Ω
C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 7 Typical turn-off energy vs collector current
300
Tcase = 125˚C
275 VGE = ±15V
A
250 VCE = 900V
225
B
C
200
175
150
125
100
75
50
A: Rg = 4.7Ω
25
B: Rg = 3.3Ω
C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 8 Typical turn-off energy vs collector current
60
VGE = ±15V
VCE = 900V
50 Rg = 2.2Ω
40
Tcase = 125˚C
30
Tcase = 25˚C
20
10
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 9 Typical diode turn-off energy vs collector current
1400
1200
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 2.2Ω
1000
td(off)
800
600
td(on)
400
tf
tr
200
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 10 Typical switching times
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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