DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-2B
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
1.2
1.0
¢
0.8
0.6
0.4
0.2
0
0
50
100
150
180
¥
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
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Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
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1.0.1
1.0
0.1
q£ sv¤
£X ¢} sc¥
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0.01
0.6 0.7 08
0.9 1.0 1.1 1.2
1.3
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
HII
TJ = 25 oC
56
E¢F G
8¢9 @
7
CD
A©BB
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
H6
0.1
´q¹ µs¶·vº ¸
.01
®¯
0
°c±
40
²³
¦§c§
¨©ª
ǩ¢
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
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PQQ
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wyx ¢
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d £p¢recefi
ef
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Pulse Duration (Milliseconds)
FIGURE 6. PEAK FORWARD SURGE CURRENT
% &' ( ) 0 1 2 0 3 4 3