IRFR220 Ver la hoja de datos (PDF) - Intersil
Número de pieza
componentes Descripción
Fabricante
IRFR220 Datasheet PDF : 7 Pages
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IRFR220, IRFU220
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD
Modified MOSFET Sym-
D
Pulse Source to Drain Current (Note 3)
ISDM
bol Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
-
4.6
A
-
-
18
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
S
VSD
TJ = 25oC, ISD = 4.6A, VGS = 0V, (Figure 13)
-
-
1.8
V
trr
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs
69
170
400
ns
QRR
TJ = 25oC, ISD = 4.6A, dISD/dt = 100A/µs
0.30 0.72
1.8
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 4.6A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
4-391
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