GF14NC60KD Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

GF14NC60KD

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH™ IGBT

STMicroelectronics 

Electrical characteristics

STGB10NC60KD - STGP10NC60KD - STGF10NC60KD

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

VCE(sat)

Collector-emitter saturation VGE= 15V, IC= 5A

voltage

VGE= 15V, IC= 5A, Tc= 125°C

VGE(th) Gate threshold voltage

VCE= VGE, IC= 250 µA

4.5

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

gfs Forward transconductance VCE = 15V, IC= 5A

V

2.2 2.5 V

1.8

V

6.5 V

150 µA

1 mA

±100 nA

15

S

Table 4. Dynamic

Symbol

Parameter

Cies

Coes

Cres

Qg

Qge

Qgc

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-emitter charge

Gate-collector charge

Test conditions

VCE = 25V, f = 1MHz,

VGE = 0

VCE = 390V, IC = 5A,

VGE = 15V,

(see Figure 18)

Min. Typ. Max. Unit

380

pF

46

pF

8.5

pF

19

nC

5

nC

9

nC

4/17

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