GBPC601-E4 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
GBPC601-E4 Datasheet PDF : 4 Pages
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GBPC6005 thru GBPC610
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
GBPC
6005
GBPC
601
GBPC
602
GBPC
604
GBPC
606
GBPC
608
GBPC
610
UNIT
Maximum instantaneous forward
voltage drop per diode
3.0 A
VF
1.0
V
Maximum DC reverse current at rated TA = 25 °C
DC blocking voltage per diode
TA = 125 °C
IR
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
5.0
500
µA
186
90
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GBPC
6005
GBPC
601
GBPC
602
GBPC
604
GBPC
606
GBPC
608
GBPC
610
UNIT
Typical thermal resistance (1)
RθJA
RθJC
22
7.3
°C/W
Notes:
(1) Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #6 screw
(2) Unit mounted on 5.5 x 6.0 x 0.11" thick (14 x 15 x 0.3 cm) aluminum plate
(3) Unit mounted on P.C.B. at 0.375" (9.5 mm) lead length with 0.5 x 0.5" (12 x 12 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GBPC606-E4/51
3.2
51
BASE QUANTITY
100
DELIVERY MODE
Paper box
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
Case Temperature,
TC Heatsink Mounting
5.5 x 6.0 x 0.11" Thk.
6.0
(14 x 15 x 0.3 cm)
Al. Plate
60 Hz Resistive or
Inductive Load
4.0
2.0
Ambient Temperature, TA
P.C.B. Mounting
0.375" (9.5 mm) Lead Length
0
0
50
100
150
Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
200
TJ = TJ Max.
Single Sine-Wave
175
150
125
100
75
50
1
1.0 Cycle
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88613
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 15-Apr-08
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