GA400TD60U Ver la hoja de datos (PDF) - International Rectifier

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GA400TD60U

"HALF-BRIDGE" IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT

International Rectifier 

GA400TD60U

250

200

150

Square wave:

60% of rated

v o ltag e

100

I

50

Ideal diodes

0

0.1

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

G ate drive as specified

P ow e r Dis sip ation = 175 W

1

10

100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000

 TJ = 25 °C

 TJ = 125 °C

100

10

1.0

 VGE = 15V

80µs PULSE WIDTH

1.5

2.0

2.5

3.0

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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1000

 TJ = 125 °C

100

 TJ = 25 °C

10

 VCE = 25V

80µs PULSE WIDTH

1

5.0

6.0

7.0

8.0

9.0

VGE , Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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