GA400TD60U Ver la hoja de datos (PDF) - International Rectifier
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GA400TD60U Datasheet PDF : 10 Pages
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GA400TD60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — —
VGE = 0V, IC = 1mA
VCE(on)
Collector-to-Emitter Voltage
— 1.7 2.4
VGE = 15V, IC = 400A
— 1.8 — V VGE = 15V, IC = 400A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
IC = 2.5mA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 2.5mA
gfe
Forward Transconductance T
— 481 — S VCE = 25V, IC = 400A
ICES
Collector-to-Emitter Leaking Current
— — 2.0 mA VGE = 0V, VCE = 600V
— — 20
VGE = 0V, VCE = 600V, TJ = 125°C
VFM
Diode Forward Voltage - Maximum
— 3.7 — V IF = 400A, VGE = 0V
— 3.6 —
IF = 400A, VGE = 0V, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
— — 500 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 1806 2709
VCC = 400V
— 251 376
— 612 918
— 1033 —
— 335 —
nC IC = 270A ,VGE = 15V
TJ = 25°C
RG1 = 15Ω, RG2 = 0Ω,
ns IC = 400A
— 688 —
— 225 —
VCC = 360V
VGE = ±15V
— 26 — mJ
— 48 —
— 74 89
— 40136 —
VGE = 0V
— 2509 —
— 522 —
pF VCC = 30V
ƒ = 1 MHz
— 232 —
— 141 —
— 16292 —
— 1641 —
ns
A
nC
A/µs
IC = 400A
RG1 = 15Ω
RG2 = 0Ω
VCC = 360V
di/dt=1300A/µs
2
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