GA100TS60SFPBF(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
GA100TS60SFPBF
(Rev.:2010)
(Rev.:2010)
Vishay Semiconductors
GA100TS60SFPBF Datasheet PDF : 7 Pages
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GA100TS60SFPbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Standard Speed IGBT), 100 A
60
Tj = 125˚C
Vce = 480V
50 Vge = 15V
Eoff
Rge = 15 Ω
40
30
20
10
Eon
0
0
40
80
120 160
IC, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
1000
Vr = 200V
If = 50A, Tj = 125˚C
100
If = 50A, Tj = 25˚C
10
100
1000
dif /dt - A/μs
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
1000
100
Tj = 125˚C
10
Tj = 25˚C
100
Vr = 200V
If = 50A, Tj = 125˚C
10
If = 50A, Tj = 25˚C
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop- VFM (V)
Fig. 8 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1
100
dif /dt - A/μs
1000
Fig. 10 - Typical Reverse Recovery Current vs. dIF/dt
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Document Number: 94544
Revision: 04-May-10
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