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GA200NS61U Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Fabricante
GA200NS61U Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
GA200NS61U
1000
1000
TJ = 125 °C
100
TJ = 25 °C
10
0.5
VGE = 15V
80µs PULSE WIDTH
1.0
1.5
2.0
2.5
3.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
TJ = 125 °C
100
TJ = 25 °C
10
VCE = 25V
80µs PULSE WIDTH
1
5.0
6.0
7.0
8.0
9.0
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
240
200
160
120
80
40
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
3.0 VGE = 15V
80 us PULSE WIDTH
IC =400 A
2.0
IC =200 A
IC =100 A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 3 - Maximum Collector Current vs. Case
Temperature
www.irf.com
Fig. 4- Typical Collector-to-Emitter Voltage vs.
Junction Temperature
3

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