GA100TS120U Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
GA100TS120U Datasheet PDF : 10 Pages
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GA100TS120U
35000
28000
21000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce
Cres = Cgc
Coes = Cce + Cgc
SHORTED
Cies
14000
7000
Coes
Cres
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
20
VCC = 400V
I C = 113A
16
12
8
4
0
0
300
600
900
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
VCC = 720V
VGE = 15V
TJ = 125 °C
IC = 100A
50
40
1000 RGG1=1=5OΩh;RmG2 = 0 Ω
VGE = 15V
VCC = 720V
100
10
IC = 200 A
IC = 100 A
IC = 50 A
30
10
20
30
40
50
RG , Gate Resistance (Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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