GA200TD120U Ver la hoja de datos (PDF) - International Rectifier
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GA200TD120U Datasheet PDF : 10 Pages
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GA200TD120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 —
VCE(on)
Collector-to-Emitter Voltage
— 2.3
— 2.1
VGE(th)
Gate Threshold Voltage
3.0 —
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -11
gfe
Forward Transconductance
— 261
ICES
Collector-to-Emitter Leaking Current
——
——
VFM
Diode Forward Voltage - Maximum
— 3.2
— 3.1
IGES
Gate-to-Emitter Leakage Current
——
—
VGE = 0V, IC = 1mA
2.8
VGE = 15V, IC = 200A
— V VGE = 15V, IC = 200A, TJ = 125°C
6.0
IC = 2.5mA
— mV/°C VCE = VGE, IC = 2.5mA
— S VCE = 25V, IC = 200A
2.0 mA VGE = 0V, VCE = 1200V
20
VGE = 0V, VCE = 1200V, TJ = 125°C
4.1 V IF = 200A, VGE = 0V
—
IF = 200A, VGE = 0V, TJ = 125°C
500 nA VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
— 1660 2490
VCC = 400V
VGE = 15V
— 280 420 nC IC = 249A
— 550 825
TJ = 25°C
— 636 —
RG1 = 15Ω, RG2 = 0Ω,
— 201 — ns IC = 200A
— 650 —
VCC = 720V
— 341 —
VGE = ±15V
— 44 — mJ
— 44 —
— 88 130
— 37343 —
VGE = 0V
— 1660 — pF VCC = 30V
— 322 —
ƒ = 1 MHz
— 196 — ns IC = 200A
— 131 — A RG1 = 15Ω
— 12833 — nC RG2 = 0Ω
— 1740 — A/µs VCC = 720V
di/dt»1294A/µs
2
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