HPMX-5001-TY1 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza

componentes Descripción

Fabricante

HPMX-5001-TY1

1.5–2.5 GHz Upconverter/Downconverter

HP => Agilent Technologies 

HPMX-5001 Absolute Maximum Ratings[1]

Parameter

Min.

Max.

VCC Supply Voltage

Voltage at Any Pin[4]

Power Dissipation[2,3]

-0.2 V

-0.2 V

8V

VCC + 0.2 V

600 mW

RF Input Power

Junction Temperature

Storage Temperature

-55°C

15 dBm

+150°C

+125°C

Thermal Resistance[2]:

θjc = 100°C/W

Notes:

1. Operation of this device in excess of

any of these parameters may cause

permanent damage.

2. TCASE = 25°C.

3. Derate at 10 mW/°C for TCASE > 90°C.

4. Except CMOS logic inputs – see

Summary Characterization Information

table.

HPMX-5001 Guaranteed Electrical Specifications

Unless otherwise noted, all parameters are guaranteed under the following conditions: VCC = 3.0 V. Test

results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical

values are for VCC = 3.0 V, TA = 25°C.

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

GC

Receive Conversion Gain[1]

Pout Transmitter Power Output

dB

12 14

Input[2]

2:1 output VSWR dBm

0

2

ICC Device Supply Current

Transmit Mode mA

Receive Mode mA

64 80

43 54

Synth Mode mA

15 19

Standby Mode (with DIVMC Set High) µA

1

50

VDIV DIV Single-Ended Swing[3]

VPP

0.7

1

Notes:

1. 50 Ω RF source, 100 MHz < IF < 300 MHz, 1.89 GHz RF. There is a 750 Ω resistor on chip between RXIF and RXIFB (pins 3 and 4). A

matching network from 750 Ω to 50 Ω is used for this measurement. Insertion loss of the matching network is included in the net

conversion gain figure. See Figure 28.

2. Signal injected into P3 in Figure 28 is -12.5 dBm.

3. DIV output AC coupled into a 2 kΩ || 10 pF load. See test board schematic diagram, Figure 28.

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