ATF-36163 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-36163 Datasheet PDF : 10 Pages
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ATF-36163 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
ID
PT
Pin max
TCH
TSTG
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum
+3
-3
-3.5
Idss
180
+10
150
-65 to 150
Thermal Resistance:
θch-c = 160°C/W
Note:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
ATF-36163 Electrical Specifications
TC = 25°C, ZO = 50 Ω, Vds = 1.5 V, Ids = 10 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions
NF
Noise Figure[1]
f =12.0 GHz
G
Gain at NF[1]
f = 12.0 GHz
gm
Idss
Vp 10%
BVGDO
Transconductance
Saturated Drain Current
Pinchoff Voltage
Gate Drain Breakdown Voltage
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, VGS = 0 V
VDS = 1.5 V, IDS = 10% of Idss
IG = 30 µA
Note:
1. Measured in a test circuit tuned for a typical device.
Units
dB
dB
mS
mA
V
V
Min.
9
50
15
-1.0
Typ.
1.2
10
60
25
-0.35
Max.
1.4[1]
40
-0.15
-3.5
ATF-36163 Typical Parameters
TC = 25°C, ZO = 50 Ω, Vds = 2 V, Ids = 15 mA, (unless otherwise noted).
Symbol Parameters and Test Conditions
Fmin
Minimum Noise Figure (Γsource = Γopt)
Ga
Associated Gain
Gmax
Maximum Available Gain[1]
P1dB
Output Power at 1 dB Gain Compression
under the power matched condition
VGS
Gate to Source Voltage for IDS = 15 mA
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
f = 4 GHz
f = 12 GHz
VDS = 2.0 V
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
Units
dB
dB
dB
dB
dB
dB
dBm
dBm
V
Typ.
0.6
1.0
15.8
9.4
17.2
10.9
5
5
-0.2
5-80
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