20N120CND Ver la hoja de datos (PDF) - Fairchild Semiconductor
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componentes Descripción
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20N120CND
Fairchild Semiconductor
20N120CND Datasheet PDF : 8 Pages
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HGTG20N120CND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 3Ω , L = 1mH, VCE = 960V
35
TJ = 25oC, TJ = 150oC, VGE = 12V
30
25
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 3Ω, L = 1mH, VCE = 960V
100
TJ = 25oC, TJ = 150oC, VGE = 12V
80
60
40
20
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
450
RG = 3Ω, L = 1mH,VCE = 960V
400
VGE = 12V, VGE = 15V, TJ = 150oC
350
300
VGE = 12V, VGE = 15V, TJ = 25oC
250
200
150
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
700
RG = 3Ω , L = 1mH, VCE = 960V
600
500
400
TJ = 150oC, VGE = 12V OR 15V
300
200
TJ = 25oC, VGE = 12V OR 15V
100
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
250
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
200
150
100
TC = 25oC
50
TC = 150oC
TC = -55oC
0
6
7
8
9 10 11 12 13 14 15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
20
IG(REF) = 2mA, RL = 30Ω, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0
50
100
150
200
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG20N120CND Rev. B
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