FZL 4146
Absolute Maximum Ratings (cont’d)
Parameter
Symbol
Current in SQ
ISQ
Current in W
IW
Current in W
IW
Junction temperature
Storage temperature
Therm. resistance,
system-ambient
Therm. resistance,
system-packag.
Tj
Tstg
Rth SA
Rth SP
ESD strength acc. to MIL -
hrs. 883 Meth. 3015
(100 pF/1.5 kΩ,
5 discharges/polarity)
VESD
Burst strength of the inputs/
outputs Q and W connected to
the power transistors (in acc.
with IEC publ. 801-4)
VBurst
Junction temperature in normal Tj15
operation during 15 years with
100 % ED
Limit Values
min. max.
–3
8
–5
5
– 10 10
– 40 150
– 50 150
95
25
–2
2
300
125
Unit
mA
mA
mA
°C
°C
K/W
K/W
kV
V
°C
Remarks
Output low
1 ms, 50 ms
interval 5)
10 µs, 500 µs
interval 5)
6)
7)
8)
Notes: 5) Loading may lead to degradation and thus to a shift of the switching threshold at W.
Unfrequent loading leads to a deviation of approx. 20 mV.
6) Related to GND; the GND pins are connected with the chip carrier via the leadframe.
7) If it can be prooved with samples.
8) During normal operation, the failure rate is ≤ 100 fit acc. to SN 29500 at a junction
temperature of 75 °C.
Semiconductor Group
7