AB28F400BX-T90 Ver la hoja de datos (PDF) - Intel

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Fabricante

AB28F400BX-T90

4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH MEMORY FAMILY

Intel 

A28F400BX-T B

AC CHARACTERISTICS WE Controlled Write Operations(1) (Continued)

NOTES

1 Read timing characteristics during write and erase operations are the same as during read-only operations Refer to AC

characteristics during Read Mode

2 The on-chip WSM completely automates program erase operations program erase algorithms are now controlled inter-

nally which includes verify and margining operations

3 Refer to command definition table for valid AIN

4 Refer to command definition table for valid DIN

5 Program Erase durations are measured to valid SRD data (successful operation SR 7 e 1)

6 For Boot Block Program Erase RP should be held at VHH until operation completes successfully

7 Time tPHBR is required for successful relocking of the Boot Block

8 Sampled but not 100% tested

9 See Standard Test Configuration

BLOCK ERASE AND WORD BYTE WRITE PERFORMANCE VPP e 12 0V g5%

Parameter

A28F400BX-90

Notes

Unit

Min

Typ(1)

Max

Boot Parameter

2

Block Erase Time

15

10 5

s

Main Block

2

Erase Time

30

18

s

Main Block Byte

2

Program Time

14

50

s

Main Block Word

2

Program Time

07

25

s

NOTES

1 25 C

2 Excludes System-Level Overhead

30

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