ILQ615-5 Ver la hoja de datos (PDF) - Infineon Technologies
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ILQ615-5 Datasheet PDF : 5 Pages
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FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) Range, IF=10 mA
ILD/Q615-1: 40–80% Min.
ILD/Q615-2: 63–125% Min.
ILD/Q615-3: 100–200% Min.
ILD/Q615-4: 160–320% Min.
• Guaranteed CTR, IF=1.0 mA
ILD/Q615-1: 13% Min.
ILD/Q615-2: 22% Min.
ILD/Q615-3: 34% Min.
ILD/Q615-4: 56% Min.
• High Collector-Emitter Voltage, BVCEO=70 V
• Dual and Quad Packages Feature:
– Reduced Board Space
– Lower Pin and Parts Count
– Better Channel to Channel CTR Match
– Improved Common Mode Rejection
• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)
• Isolation Test Voltage from Double Molded
Package, 5300 VRMS
• UL Approval #E52744
•
V
DE
VDE #0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage .............................................. 6.0 V
Forward Current ........................................... 60 mA
Surge Current ................................................. 1.5 A
Power Dissipation ...................................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector
Collector-Emitter Reverse Voltage .................. 70 V
Emitter-Collector Reverse Voltage ................. 7.0 V
Collector Current .......................................... 50 mA
Collector Current (t <1.0 ms) ...................... 100 mA
Power Dissipation ...................................... 150 mW
Derate Linearly from 25°C..................... 2.0 mW/°C
Package
Storage Temperature.................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Junction Temperature.................................... 100°C
Soldering Temperature
(2.0 mm distance from case bottom) ........ 260°C
Package Power Dissipation, ILD615.......... 400 mW
Derate Linearly from 25°C.................. 5.33 mW/°C
Package Power Dissipation, ILQ615 ......... 500 mW
Derate Linearly from 25°C................. 6.67 mW/°C
Isolation Test Voltage (t=1.0 sec.) .......... 5300 VRMS
Creepage ................................................. ≥7.0 mm
Clearance................................................. ≥7.0 mm
Isolation Resistance
VIO=500 V, TA=25°C .............................. ≥1012 Ω
VIO=500 V, TA=100°C ............................ ≥1011 Ω
DUAL CHANNEL ILD615
QUAD CHANNEL ILQ615
Phototransistor Optocoupler
Dimensions in inches (mm)
.255 (6.48)
.268 (6.81)
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
pin
4 3 2 1 one ID
Anode 1
8
5 678
Cathode 2
7
Anode 3
6
.379 (9.63)
.390 (9.91)
Cathode 4
5
.031 (0.79)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
Collector
Emitter
Collector
Emitter
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Anode 1
Cathode 2
pin
one ID
Anode 3
876543 21
Cathode 4
.255 (6.48)
.265 (6.81)
Anode
5
9 10 11 12 13 14 15 16
Cathode 6
.779 (19.77 )
.790 (20.07)
Anode 7
Cathode 8
16 Collector
15 Emitter
14 Collector
13 Emitter
12 Collector
11 Emitter
10 Collector
9 Emitter
4°
.018 (.46)
.022 (.56)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.100 (2.54)typ.
.020(.51)
.035 (.89)
.050 (1.27)
.300 (7.62)
typ.
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
DESCRIPTION
The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs
IRLED emitters and high gain NPN phototransistors. These devices are con-
structed using over/under leadframe optical coupling and double molded
insulation technology resulting a Withstand Test Voltage of 7500 VACPEAK
and a Working Voltage of 1700 VRMS.
The binned min./max. and linear CTR characteristics combined with the
TRIOS (TRansparent IOn Shield) field-effect process make these devices
well suited for DC or AC voltage detection. Eliminating the phototransistor
base connection provides added electrical noise immunity from the tran-
sients found in many industrial control environments.
Because of guaranteed maximum non-saturated and saturated switching
characteristics, the ILD/Q615 can be used in medium speed data I/O and
control systems. The binned min./max. CTR specification allow easy worst
case interface calculations for both level detection and switching applica-
tions. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at
IF=1.0 mA.
See Appnote 45, “How to Use Optocoupler Normalized Curves”.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–193
March 9, 2000-20
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