ILD66-3 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
ILD66-3 Datasheet PDF : 3 Pages
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FEATURES
• Internal RBE for High Stability
• Current Transfer Ratio is Tested
at 2.0 mA and 0.7 mA Input
IL/ILD/ILQ66 Series:
–1, 100% min. at IF=2.0 mA, VCE=10 V
–2, 300% min. at IF=2.0 mA, VCE=10 V
–3, 400% min. at IF=0.7 mA, VCE=10 V
–4, 500% min. at IF=2.0 mA, VCE=5.0 V
• Four Available CTR Categories per
Package Type
• BVCEO>60 V
• Standard DIP Packages
• Underwriters Lab File #E52744
•
V
DE
VDE 0884 Available with Option 1
DESCRIPTION
IL66, ILD66, and ILQ66 are optically coupled iso-
lators employing Gallium Arsenide infrared emit-
ters and silicon photodarlington detectors.
Switching can be accomplished while maintaining
a high degree of isolation between driving and
load circuits, with no crosstalk between channels.
Maximum Ratings
Emitter Each Channel
Peak Reverse Voltage .................................... 6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C......................... 100 mW
Derate Linearly from 25°C ................... 1.33 mW/°C
Detector (Each Channel)
Power Dissipation at 25°C Ambient .......... 150 mW
Derate Linearly from 25°C ..................... 2.0 mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS
Total Package Power Dissipation at 25°C
IL66.......................................................... 250 mW
ILD66 ....................................................... 400 mW
ILQ66....................................................... 500 mW
Derate Linearly from 25°C
IL66...................................................... 3.3 mW/°C
ILD66 ................................................. 5.33 mW/°C
ILQ66................................................. 6.67 mW/°C
Creepage .................................................... ≥7 min
Clearance .................................................... ≥7 min
Comparative Tracking Index .............................175
Isolation Resistance
VIO=500 V, TA=25°C............................... ≥1012 Ω
VIO=500 V, TA=100°C............................. ≥1011 Ω
Storage Temperature................... –55°C to +125°C
Operating Temperature ............... –55°C to +100°C
Lead Soldering Time at 260°C ....................10 sec.
SINGLE CHANNEL IL66
DUAL CHANNEL ILD66
QUAD CHANNEL ILQ66
Photodarlington Optocoupler
Dimensions in inches (mm)
Single Channel
321
pin one ID
Anode 1
6
.248 (6.30)
.256 (6.50)
Cathode 2
5
4 56
NC 3
4
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Dual Channel
.335 (8.50)
.343 (8.70)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°–9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
pin one ID
4 321
.255 (6.48)
.268 (6.81)
5 678
Anode 1
Cathode 2
Cathode 3
8 Emitter
7 Collector
6 Collector
.379 (9.63)
Anode 4
5 Emitter
.030 (0.76)
.045 (1.14)
4° typ.
.050 (1.27)
.018 (.46)
.022 (.56)
.390 (9.91)
.031 (0.79)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
.300 (7.62)
typ.
10 °
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Quad Channel
pin one ID
876543 21
.255 (6.48)
.265 (6.81)
9 10 11 12 13 14 15 16
Anode 1
Cathode 2
Cathode 3
Anode 4
Anode 5
Cathode 6
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
.779 (19.77 )
.790 (20.07)
Cathode 7
Anode 8
10 Collector
9 Emitter
4°
.018 (.46)
.022 (.56)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.100 (2.54)typ.
.020(.51)
.035 (.89)
.050 (1.27)
.300 (7.62)
typ.
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–95
March 1, 2000-00
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