FSL136MRT Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Fabricante
FSL136MRT Datasheet PDF : 13 Pages
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Electrical Characteristics
TJ = 25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero-Gate-Voltage Drain Current
RDS(ON) Drain-Source On-State Resistance
CISS
COSS
CRSS
tr
Input Capacitance(12)
Output Capacitance(12)
Reverse Transfer Capacitance(12)
Rise Time
tf
td(on)
Fall Time
Turn-On Delay
td(off)
Turn-Off Delay
Control Section
fS
Switching Frequency(12)
ΔfS
Switching Frequency Variation(12)
DMAX Maximum Duty Ratio
DMIN Minimum Duty Ratio
IFB
Feedback Source Current
VSTART
VSTOP
tS/S
UVLO Threshold Voltage
Internal Soft-Start Time
Burst-Mode Section
VBURH
VBURL
Hys
Burst-Mode Voltage
Protection Section
ILIM
Peak Drain Current Limit
VSD
Shutdown Feedback Voltage
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(12,14)
VOVP Over-Voltage Protection
TSD
Thermal Shutdown Temperature(12)
Hys
Condition
VCC=0V, ID=250μA
VDS=520V, TA=125°C
VGS=10V, ID =1A
VDS=25V, VGS=0V, f=1MHz
VDS=25V, VGS=0V, f=1MHz
VDS=25V, VGS=0V, f=1MHz
VDS=325V, ID=3.5A
VDS=325V, ID=3.5A
VDS=325V, ID=3.5A
VDS=325V, ID= 3.5A
VCC=14V, VFB=4V
-25°C < TJ < 125°C
VCC=14V, VFB=4V
VCC=14V, VFB=0V
VFB=0
VFB=0V, VCC Sweep
After Turn-on, VFB=0V
VCC Sweep
VCC=14V, VFB Sweep
di/dt=300mA/μs
VCC=14V, VFB Sweep
VCC=14V, VFB=4V
VCC Sweep
Shutdown Temperature
Hysteresis
Min. Typ. Max. Unit
650
V
250
μA
3.5
4.0
Ω
290
pF
45
pF
5.5
pF
22
ns
19
ns
12
ns
20
ns
61
67
73
kHz
±5
±10
%
61
67
73
%
0
%
65
90
115
μA
11
12
13
V
7.0
7.5
8.0
V
15
ms
0.39 0.45 0.51
V
0.26 0.30 0.34
V
150
mV
1.89 2.15 2.41
A
6.45 7.00 7.55
V
1.2
2.0
2.8
μA
350
ns
23.0 24.5 26.0
V
130 140 150
°C
60
°C
Continued on the following page…
© 2012 Fairchild Semiconductor Corporation
FSL136MRT • Rev. 1.0.0
5
www.fairchildsemi.com
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