FS5AS-10A-T13 Ver la hoja de datos (PDF) - Renesas Electronics

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FS5AS-10A-T13

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS5AS-10A

High-Speed Switching Use

Nch Power MOS FET

Features

• Drive voltage : 10 V

• VDSS : 500 V

• rDS(ON) (max) : 1.5 Ω

• ID : 5 A

Outline

MP-3A

4

12 3

Applications

SMPS, Lamp Ballast, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

PD

Tch

Tstg

—

2, 4

1

3

Ratings

500

±30

5

15

5

65

– 55 to +150

– 55 to +150

0.32

REJ03G0246-0100

Preliminary

Rev.1.00

Aug.20.2004

1. Gate

2. Drain

3. Source

4. Drain

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 200 µH

W

°C

°C

g

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

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