FS30AS-06-T13 Ver la hoja de datos (PDF) - Renesas Electronics

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Fabricante

FS30AS-06-T13

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS30AS-06

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

(Tch = 25°C)

Min

Typ

Max

Unit

Test Conditions

60

—

—

V

ID = 1 mA, VGS = 0 V

—

—

±0.1

µA VGS = ±20 V, VDS = 0 V

—

—

0.1

mA VDS = 60 V, VGS = 0 V

2.0

3.0

4.0

V

ID = 1 mA, VDS = 10 V

—

23

30

mΩ ID = 15 A, VGS = 10 V

—

0.345 0.450

V

ID = 15 A, VGS = 10 V

14

20

—

S

ID = 15 A, VDS = 10 V

—

1250

—

pF VDS = 10 V, VGS = 0 V,

—

310

—

pF f = 1MHz

—

150

—

pF

—

20

—

ns VDD = 30 V, ID = 15 A,

—

50

—

ns VGS = 10 V,

—

60

—

ns

RGEN = RGS = 50 Ω

—

60

—

ns

—

1.0

1.5

V

IS = 15 A, VGS = 0 V

—

—

3.57 °C/W Channel to case

—

65

—

ns IS = 30 A, dis/dt = –100 A/µs

Rev.2.00 Aug 07, 2006 page 2 of 6

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