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FQP2N60C

600V N-Channel MOSFET

Fairchild Semiconductor 

FQP2N60C/FQPF2N60C

600V N-Channel MOSFET

QFET TM

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V

• Low gate charge ( typical 8.5 nC)

• Low Crss ( typical 4.3 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

D

!

GDS

TO-220

FQP Series

GD S

TO-220F

FQPF Series

G!

●

◀▲

●

●

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

Parameter

VDSS

Drain-Source Voltage

ID

Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

IDM

Drain Current - Pulsed

(Note 1)

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

EAR

Repetitive Avalanche Energy

(Note 1)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

PD

Power Dissipation (TC = 25°C)

- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

FQP2N60C FQPF2N60C

600

2.0

2.0 *

1.35

1.35 *

8

8*

± 30

120

2.0

5.4

4.5

54

23

0.43

0.18

-55 to +150

300

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

FQP2N60C

2.32

0.5

62.5

FQPF2N60C

5.5

--

62.5

Units

°C/W

°C/W

°C/W

©2003 Fairchild Semiconductor Corporation

Rev. A, September 2003

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