FQP30N06L(2001) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQP30N06L Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. VGS = 0 V
2. ID =250 μ A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
102
100 µ s
1 ms
10 ms
DC
101
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100
10-1
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 16 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
40
30
20
10
0
25
50
75
100
125
150
175
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 0 D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ Notes :
1.
Zθ
(t)
JC
=
1 .9 0
℃ /W
M ax.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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