FQP30N06L(2001) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQP30N06L Datasheet PDF : 8 Pages
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Typical Characteristics
102
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
80
60
V = 5V
GS
V = 10V
GS
40
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
C
oss
C
iss
1000
C
rss
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101
175℃
25℃
-55℃
※ Notes :
1. VDS = 25V
2. 250μ s Pulse Test
100
0
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
175℃
100
0.4
0.6
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
V = 48V
8
DS
6
4
2
※ Note : ID = 32A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1. May 2001
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