FQA7N80C_F109 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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Fabricante
FQA7N80C_F109 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
※ Notes :
1. 250µs PulseTest
2. TC = 25℃
10-2
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4.0
3.5
3.0
VGS = 10V
2.5
VGS = 20V
2.0
1.5
※ Note : TJ = 25℃
1.0
0
3
6
9
12
15
18
ID, Drain Current [A]
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
1000
500
0
10-1
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 160V
10
VDS = 400V
VDS = 640V
8
6
4
2
※ Note : ID = 6.6A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
3
FQA7N80C_F109 Rev. A
www.fairchildsemi.com
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