FQA13N80_F109(2006) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQA13N80_F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
3.0
2.5
1.1
2.0
1.0
1.5
0.9
※ Notes :
1. VGS = 0 V
2. ID =250µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1.0
※ Notes :
0.5
1. VGS = 10 V
2. ID = 6.3 A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
Operation in This Area
102
is Limited by R DS(on)
10µ s
100µ s
101
1 ms
10 ms
DC
100
10-1
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
D =0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .02
0 .0 1
s in g le p u lse
※ N otes :
1. Z (t) = 0.42 ℃ /W M ax.
θ JC
2. D uty Factor, D =t1/t2
3. T JM - TC = P DM * Zθ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P u lse D u ratio n [sec]
4
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FQA13N80 Rev. A1
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