DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

FODM8801B Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FODM8801B Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified
Symbol
Parameter
Value
Units
TOTAL PACKAGE
TSTG
Storage Temperature
TOPR
Operating Temperature
TJ
Junction Temperature
TSOL
Lead Solder Temperature
(Refer to Reflow Temperature Profile on page 13)
EMITTER
IF(average)
Continuous Forward Current
VR
Reverse Input Voltage
PDLED
Power Dissipation(1)(3)
DETECTOR
IC(average)
Continuous Collector Current
VCEO
Collector-Emitter Voltage
VECO
Emitter-Collector Voltage
PDC
Collector Power Dissipation(2)(3)
-40 to +150
°C
-40 to +125
°C
-40 to +140
°C
260 for 10 s
°C
20
mA
6
V
40
mW
30
mA
75
V
7
V
150
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
TA
VFL(OFF)
IFH
Parameter
Operating Temperature
Input Low Voltage
Input High Forward Current
Value
-40 to +125
-5.0 to +0.8
1 to 10
Units
°C
V
mA
Isolation Characteristics
Symbol
Parameter
Test Conditions
Min.
VISO
RISO
CISO
Input-Output Isolation Voltage f = 60 Hz, t = 1 min., II-O 10 µA(4)(5)
Isolation Resistance
VI-O = 500 V(4)
Isolation Capacitance
f = 1 MHz
3,750
1012
Typ.
0.3
Max. Unit
VacRMS
Ω
0.5
pF
Notes:
1. Derate linearly from 73˚C at a rate of 0.24 mW/˚C
2. Derate linearly from 73˚C at a rate of 2.23 mW/˚C.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions
outside these ratings.
4. Device is considered a two-terminal device: pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
5. 3,750 VACRMS for 1 minute is equivalent to 4,500 VACRMS for 1 second.
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
3
www.fairchildsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]