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FODM8801B Ver la hoja de datos (PDF) - Fairchild Semiconductor

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FODM8801B Datasheet PDF : 14 Pages
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April 2013
FODM8801A, FODM8801B, FODM8801C
OptoHiT™ Series, High-Temperature Phototransistor
Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Features
Utilizing Proprietary Process Technology to Achieve
High Operating Temperature: up to 125°C
Guaranteed Current Transfer Ratio (CTR)
Specifications Across Full Temperature Range
– Excellent CTR Linearity at High-Temperature
– CTR at Very Low Input Current, IF
High Isolation Voltage Regulated by Safety Agency:
C-UL / UL1577, 3750 VACRMS for 1 minute and
DIN EN/IEC60747-5-5
Compact Half-Pitch, Mini-Flat, 4-Pin Package
(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff
Height)
> 5mm Creepage and Clearance Distance
Applicable to Infrared Ray Reflow, 245°C
Applications
Primarily Suited for DC-DC Converters
Ground-Loop Isolation, Signal-Noise Isolation
Communications – Adapters, Chargers
Consumer – Appliances, Set-Top Boxes
Industrial – Power Supplies, Motor Control,
Programmable Logic Control
Description
In the OptoHiT™ series, the FODM8801 is a first-of-kind
phototransistor, utilizing Fairchild’s leading-edge
proprietary process technology to achieve high operating
temperature characteristics, up to 125°C. The opto-
coupler consists of an aluminum gallium arsenide
(AlGaAs) infrared light-emitting diode (LED) optically
coupled to a phototransistor, available in a compact half-
pitch, mini-flat, 4-pin package. It delivers high current
transfer ratio at very low input current. The input-output
isolation voltage, VISO, is rated at 3750 VACRMS.
Schematic
Package
ANODE 1
4 COLLECTOR
CATHODE 2
3 EMITTER
Figure 1. Schematic
Figure 2. Half-Pitch Mini-Flat
©2010 Fairchild Semiconductor Corporation
FODM8801X Rev. 1.1.2
www.fairchildsemi.com

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