FMW3 Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

FMW3

General purpose (Dual NPN Transistors)

TY Semiconductor 

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■ Features

● High breakdown voltage

● Power dissipation: PC=300mW

● Collector Curren: IC=50mA

FMW3

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Product specification

FMW3

5

4

1

2

3

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation(TOTAL)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

120

120

5.0

50

300

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

Collector cutoff current

DC current gain

Collector-emitter saturation voltage

Transition frequency

■ Marking

Marking

W3

Symbol

Test conditions

V(BR)CBO Ic= 50μA, IE=0

V(BR)CEO Ic= 1 mA， IB=0

V(BR)EBO IE= 50 μA， IC=0

IcBO VCB= 100 V , IE=0

IEBO VCE= 4.0V , IC=0

hFE VCE= 60V, IC= 2.0mA

VCE(sat) IC=10 mA, IB= 1.0mA

fT VCE= 12V, IC= 2mA,f=100MHz

Unit

V

V

V

mA

mW

℃

℃

Min Typ Max Unit

120

V

120

V

5.0

V

0.5 μA

0.5 μA

180

820

0.5 V

140

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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