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FMMT415

NPN AVALANCHE TRANSISTOR IN SOT23

Diodes Incorporated. 

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

FMMT415

260

—

Collector-Emitter Breakdown Voltage

BVCES

FMMT417

320

—

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

100

—

Emitter-Base Breakdown Voltage

BVEBO

6

—

Collector Cutoff Current

ICBO

—

—

Emitter Cutoff Current

Static Forward Current Transfer Ratio (Note 8)

Collector-Emitter Saturation Voltage (Note 8)

Base-Emitter Saturation Voltage (Note 8)

Pulsed Current in Second Breakdown

Collector-Emitter Inductance

IEBO

—

—

hFE

25

—

VCE(sat)

—

—

VBE(sat)

—

—

—

25

IUSB

—

35

Lce

—

2.5

Output Capacitance

Cobo

—

—

Transition Frequency

fT

40

—

Note:

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

FMMT415

FMMT417

Max

—

—

—

—

100

10

100

—

500

900

—

—

—

8

—

Unit

V

V

V

nA

µA

nA

—

mV

mV

A

A

nH

pF

MHz

Test Condition

IC = 1mA

TJ = -55 to +150°C

IC = 1mA

IC = 100µA

IE = 100µA

VCB = 180V

VCB = 180V, TJ = +100°C

VEB = 4V

IC = 10mA, VCE = 10V

IC = 10mA, IB = 1mA

IC = 10mA, IB = 1mA

VC = 200V, CCE = 620pF

VC = 250V, CCE = 620pF

Standard SOT23 leads

VCB = 20V, IE = 0

f = 100MHz

VCE = 20V, IC = 10mA,

f = 20MHz

FMMT415 - FMMT417

Datasheet Number: DS33084 Rev. 6 - 2

4 of 7

www.diodes.com

November 2015

© Diodes Incorporated

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