FM25V10 Ver la hoja de datos (PDF) - Cypress Semiconductor

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Fabricante

FM25V10

3V F-RAM Memory

Cypress Semiconductor 

FM25V10 - 1Mb SPI FRAM

S

C

.......

D

C3h

Q

Byte 7

Byte 6

...

Byte 1

Byte 0

Figure 15. Read Serial Number

Endurance

The FM25V10 and FM25VN10 devices are capable

of being accessed at least 1014 times, reads or writes.

An F-RAM memory operates with a read and restore

mechanism. Therefore, an endurance cycle is applied

on a row basis for each access (read or write) to the

memory array. The F-RAM architecture is based on

an array of rows and columns. Rows are defined by

A16-A3 and column addresses by A2-A0. See Block

Diagram (pg 2) which shows the array as 16K rows

of 64-bits each. The entire row is internally accessed

once whether a single byte or all eight bytes are read

or written. Each byte in the row is counted only once

in an endurance calculation. The table below shows

endurance calculations for 64-byte repeating loop,

which includes an op-code, a starting address, and a

sequential 64-byte data stream. This causes each byte

to experience one endurance cycle through the loop.

F-RAM read and write endurance is virtually

unlimited even at 40MHz clock rate.

Table 7. Time to Reach 100 Trillion Cycles for Repeating 64-byte Loop

SCK Freq

(MHz)

Endurance

Cycles/sec.

Endurance

Cycles/year

Years to Reach

1014 Cycles

40

73,520

2.32 x 1012

43.2

20

36,760

1.16 x 1012

86.4

10

18,380

5.79 x 1011

172.7

5

9,190

2.90 x 1011

345.4

Document Number: 001-84499 Rev. **

Page 11 of 17

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