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FGP20N60UFD

600V, 20A Field Stop IGBT

Fairchild Semiconductor 

FGP20N60UFD

600V, 20A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =1.8V @ IC = 20A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

October 2008

tm

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series

of Field Stop IGBTs offer the optimum performance for Induction

Heating, UPS, SMPS and PFC applications where low conduc-

tion and switching losses are essential.

C

1

TO-220

1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

PD

TJ

Tstg

TL

Description

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 25oC

@ TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC(IGBT)

RθJC(Diode)

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

G

E

Ratings

600

± 20

40

20

60

165

66

-55 to +150

-55 to +150

300

Typ.

-

-

-

Max.

0.76

2.51

62.5

Units

V

V

A

A

A

W

W

oC

oC

oC

Units

oC/W

oC/W

oC/W

©2008 Fairchild Semiconductor Corporation

1

FGP20N60UFD Rev. A

www.fairchildsemi.com

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