FGH40N65UFD Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FGH40N65UFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A
80A
4
IC = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
5000
4000
Common Emitter
VGE = 0V, f = 1MHz
Ciss
TC = 25oC
3000
2000
Coss
1000
Crss
0
0.1
1
10
30
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
400
100
10s
10
100s
1ms
1
0.1
0.01
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
10 ms
DC
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
40A
80A
4
IC = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
Vcc = 100V
9
200V
300V
6
3
0
0
50
100
150
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
200
100
10
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
10
20
30
40
50
Gate Resistance, RG []
©2008 Fairchild Semiconductor Corporation
5
FGH40N65UFD Rev. C0
www.fairchildsemi.com
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