FGH40N60SFDTU Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGH40N60SFDTU Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGH40N60SFD FGH40N60SFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
600
-
-
V
-
0.6
-
V/oC
-
-
250
µA
-
-
±400
nA
4.0
5.0
6.5
V
-
2.3
2.9
V
-
2.5
-
V
-
2110
-
pF
-
200
-
pF
-
60
-
pF
-
25
-
ns
-
42
-
ns
-
115
-
ns
-
27
54
ns
-
1.13
-
mJ
-
0.31
-
mJ
-
1.44
-
mJ
-
24
-
ns
-
43
-
ns
-
120
-
ns
-
30
-
ns
-
1.14
-
mJ
-
0.48
-
mJ
-
1.62
-
mJ
-
120
-
nC
-
14
-
nC
-
58
-
nC
FGH40N60SFD Rev. C
2
www.fairchildsemi.com
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