FGP7N60RUFD(2006_01) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGP7N60RUFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
1000
Common Emitter
V = +/-15V, R =30Ω
GE
G
I = 7A
C
Tc = 25oC
Tc = 125oC
Eoff
Eon
Figure 14. Gate Charge Characteristics
15
Common Emitter
R = 43 ohm
L
T = 25oC
C
200V
Vcc = 100V
10
300V
Eoff
5
100
4
6
8
10
12
14
Collector Current, I [A]
C
Figure 15. SOA Characteristics
100
Ic MAX (Pulsed)
10 Ic MAX (Continuous)
50µs
100µs
1ms
1
DC Operation
0
0
4
8
12
16
20
24
Gate Charge, Q [nC]
g
0.1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 16. Transient Thermal Impedance of IGBT
10
0 .5
1
0 .2
0 .1
0 .0 5
0 .1
0 .0 2
0 .0 1
0 .0 1
1E -5
s in g le p u ls e
1E -4
1E -3
0 .0 1
0 .1
R e cta ngula r P ulse D ura tio n [se c]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1
10
6
FGP7N60RUFD Rev. A
www.fairchildsemi.com
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