FGP7N60RUFD(2006_01) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FGP7N60RUFD Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
Device
FGP7N60RUFD FGP7N60RUFDTU
Package
TO-220
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 7mA, VCE = VGE
IC = 7A, VGE = 15V
IC = 7A, VGE = 15V,
TC = 125°C
IC = 14 A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 300 V, IC = 7A,
RG = 30Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 7 A,
RG =30Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 7A,
VGE = 15V
Measured 5mm from PKG
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
--
± 100
nA
5.0
6.5
8.0
V
--
1.95
2.8
V
--
2.1
--
V
--
2.65
--
V
--
510
--
pF
--
55
--
pF
--
15
--
pF
--
60
--
ns
--
60
--
ns
--
60
80
ns
--
170
280
ns
--
0.23
--
mJ
--
0.10
--
mJ
--
0.33
0.5
mJ
--
65
--
ns
--
70
--
ns
--
55
--
ns
--
350
--
ns
--
0.25
--
mJ
--
0.27
--
mJ
--
0.52
--
mJ
--
24
36
nC
--
4
6
nC
--
10
15
nC
--
7.5
--
nH
2
FGP7N60RUFD Rev. A
www.fairchildsemi.com
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