FGA15N120AND Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

FGA15N120AND

IGBT

Fairchild Semiconductor 

Common Emitter

V =±

GE

15V,

R

G

=

20Ω

10

T = 25℃

C

T = 125℃

C

Eon

1

Eoff

0.1

5

10

15

20

25

30

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

100

Ic MAX (Pulsed)

Ic MAX (Continuous)

10

1

50µs

100µs

1ms

DC Operation

Single Nonrepetitive

0.1 Pulse Tc = 25oC

Curves must be derated

linearly with increase

in temperature

0.01

0.1

1

10

100

Collector - Emitter Voltage, VCE [V]

1000

Fig 15. SOA Characteristics

16

Common Emitter

14

R = 40Ω

L

T = 25℃

C

12

10

8

600V

400V

6

Vcc = 200V

4

2

0

0

20

40

60

80

100

120

Gate Charge, Qg [nC]

Fig 14. Gate Charge Characteristics

100

10

Safe Operating Area

V = 15V, T = 125℃

1

GE

C

1

10

100

1000

Collector-Emitter Voltage, VCE [V]

Fig 16. Turn-Off SOA

10

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

single pulse

1E-3

1E-5

1E-4

1E-3

0.01

0.1

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm × Zthjc + TC

1

10

©2003 Fairchild Semiconductor Corporation

Fig 17. Transient Thermal Impedance of IGBT

FGA15N120AND Rev. A

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