FDD6N50FTF Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDD6N50FTF Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Drain Current
vs. Case Temperature
6.0
Figure 8. Maximum Safe Operating Area
50
30μs
10
100μs
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
1000
4.8
3.6
2.4
1.2
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve
3
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 Single pulse
1E-3
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
FDD6N50F / FDU6N50F Rev. A
4
www.fairchildsemi.com
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